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Job ID: 108730

Postdoctoral Associate (Ref: IRG_LEES_2018_003)
Singapore-MIT Alliance for Research and Technology (SMART) Centre


Date Posted Jul. 5, 2018
Title Postdoctoral Associate (Ref: IRG_LEES_2018_003)
University Singapore-MIT Alliance for Research and Technology (SMART) Centre
Department Low Energy Electronic Systems Interdisciplinary Research Group
Application Deadline Aug. 3, 2018
Position Start Date Jul. 4, 2018
 
  • Singapore, Singapore
    Singapore
 
  • Post-Doc
  • Physics - General
 
 

Project Overview
Within the project titled "GaN-on-Si HEMTs", we aim to develop novel and high performance GaN electrical devices for future 5G and 6G communication systems. Specifically, this project focuses on the development of CMOS-compatible fabrication technologies of GaN high electron mobility transistors (HEMTs) on silicon substrates with high frequency operation up to E-band (60-90 GHz). Part of our research agenda involves collaboration with colleagues and industry to realize 200-mm-wafer-size Si-CMOS and GaN integration.

Job Responsibilities
The Low Energy Electronic Systems Interdisciplinary Research Group (LEES IRG) is currently seeking a Postdoctoral Associate to work on the development of CMOS-compatible fabrication technologies of E-band GaN HEMT devices. The job is based at the SMART Centre in Singapore. The job scope are as follows:

  • Layout design, process development, fabrication, characterization, device physics study and simulation of GaN based transistors for next-generation communications and power electronics applications;
  • Research and development of Si-CMOS compatible fabrication technologies of GaN HEMTs on silicon substrates with high frequency operations up to E-band (60-90 GHz);
  • Collaboration with universities and industry to realize 200-mm-wafer-size Si-CMOS and GaN integration;
  • Develop new device structures and fabrication technologies to generate publications and patents.

Requirements

  • PhD degree in microelectronics, applied physics or a related field.
  • Semiconductor fabrication experience in a cleanroom, using tools including but not limited to mask aligner, wet bench, dry etcher, e-beam evaporator, sputter, PECVD, RTA, E-beam lithography etc.
  • Knowledge of semiconductor transistor physics and fabrication processes, particularly of field effect transistors (FET) and high electron mobility transistors (HEMT).
  • Knowledge of material physics about Gallium Nitride (GaN).
  • Knowledge of RF and mmWave technologies, particularly of RF/mmWave characterization techniques for transistors, including small-signal S-parameter, noise and load-pull.
  • Programming with MATLAB, Labview etc.
  • Experience with physics-based semiconductor CAD software, e. g. Silvaco TCAD.
  • Good command of written and spoken English.

To apply, please visit our open positions website at: https://smart.mit.edu/careers/career-opportunities. Interested applicants will have to submit their full CV/resume, cover letter and at least one reference (name and contact information). We regret that only shortlisted candidates will be notified.


 
Please reference AcademicKeys.com in your cover letter when
applying for or inquiring about this job announcement.
 
 

Contact Information

 
  • Lim Yueh Ping
    Human Resource
    Singapore-MIT Alliance for Research and Technology (SMART) Centre
    1 CREATE Way, #10-01 CREATE Tower
    Singapore 138602
    Singapore, Singapore 138602
    Singapore
  •  
  • 65-65168283
  • yuehping@smart.mit.edu

 

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