We are seeking outstanding researchers/scientists to join our multi-disciplinary team for power semiconductor research to investigate cutting edge technologies in advanced power semiconductor materials. Wide band-gap semiconductors are the subject of intensive research and development activities. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent mechanical properties, making it a suitable material for MEMS. Indeed, for GaN, High Electron Mobility Transistor (HEMT) generally employ junction termination to ensure the maximum blocking voltage. A complete understanding of the doped zone (in particular buffer activity on device AlGaN/GaN/Si) has been identified as a crucial issue on both vertical or lateral design. To ensure such device realization, electrical characterization is essential. In wide bandgap materials, the uniform dopant profiling techniques are not easily achievable due to its extreme physical properties. Our research objective is to develop advanced vertical devices with our novel spatially uniform doping technology using radiation technologies.
Candidate must have received a Ph.D. within the past five years from an accredited college or university. Anyone who has extensive knowledge of nuclear physics, semiconductor physics, and quantum physics is welcome. Prior work related to device-physics and a skillful person in measurements and analyses is preferred. Good written and oral communication skills and the ability to collaborate effectively in a teaming environment are required.